Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region

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Quenching of the generation of the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure, emerging from its end, has been detected. Quenching occurs when those part of the emission reflected from the end of the heterostructure returns to the active region. This new effect allows decreasing the emission duration by up to 7.5 times.

作者简介

N. Ageeva

Kotel’nikov Institute of Radioengeneering and Electronics RAS

Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya St., 11, build. 7, Moscow, 125009

I. Bronevoi

Kotel’nikov Institute of Radioengeneering and Electronics RAS

编辑信件的主要联系方式.
Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya St., 11, build. 7, Moscow, 125009

A. Krivonosov

Kotel’nikov Institute of Radioengeneering and Electronics RAS

Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya St., 11, build. 7, Moscow, 125009

参考

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